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| SI8445DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.084 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V - 20 0.120 at VGS = - 1.8 V 0.155 at VGS = - 1.5 V 0.495 at VGS = - 1.2 V ID (A)e - 9.8 - 9.0 - 5.0 - 2.0 - 0.5 9.5 nC Qg (Typ.) FEATURES * TrenchFET(R) Power MOSFET * Ultra Small 1.2 mm Length x 1 mm Width * Ultra Thin 0.59 mm Height RoHS COMPLIANT APPLICATIONS * Portable Devices - Battery Management - Low Threshold Load Switch - Battery Protection MICRO FOOT Bump Side View Backside View 8445 S S 2 G XXX 1 S 3 D 4 G Device Marking: 8445 xxx = Date/Lot Traceability Code D Ordering Information: SI8445DB-T2-E1 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Package Reflow Conditionsc IR/Convection TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 5 - 9.8 - 7.9 - 3.9a, b - 3.1a, b - 10 - 9.5 - 1.5a, b 11.4 7.3 1.8a, b 1.1a, b - 55 to 150 260 C W A Unit V www..com Continuous Drain Current (TJ = 150 C) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 C. Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 1 SI8445DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, b Symbol RthJA Steady State RthJF Typical 55 8.5 Maximum 70 11 Unit C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 100 C/W. c. Case is defined as top surface of the package. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 5 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A VGS = - 2.5 V, ID = - 1 A Drain-Source On-State Resistance a Symbol Test Conditions Min. - 20 Typ. Max. Unit V - 19 2.3 - 0.35 - 0.85 100 -1 - 10 -5 0.070 0.082 0.097 0.115 0.165 6.5 0.084 0.100 0.120 0.155 0.495 mV/C V nA A A RDS(on) VGS = - 1.8 V, ID = - 1 A VGS = - 1.5 V, ID = - 0.7 A VGS = - 1.2 V, ID = - 0.2 A Forward Transconductancea gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDS = - 10 V, ID = - 1 A S Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance www..com Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 700 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 5 V, ID = - 1 A VDS = - 10 V, VGS = - 4.5 V, ID = 1 A VGS = - 0.1 V, f = 1 MHz VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, Rg = 1 130 80 10.5 9.5 0.9 2.2 5.5 11 25 37 10 20 40 55 15 ns 16 15 nC pF www.vishay.com 2 Document Number: 69984 S-82768-Rev. C, 17-Nov-08 SI8445DB Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 1 A, dI/dt = 100 A/s, TJ = 25 C IS = - 1 A, VGS = 0 V - 0.7 25 10 9 16 TC = 25 C - 9.5 - 10 - 1.2 50 20 A V ns nC ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www..com Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 3 SI8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 4 5 6 VGS = 1.5 V 3 TC = 125 C 2 TC = 25 C 1 4 2 VGS = 1 V TC = - 55 C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 VGS = 1.2 V 0.25 R DS(on) - On-Resistance () 900 0.20 VGS = 1.5 V 0.15 VGS = 1.8 V VGS = 2.5 V C - Capacitance (pF) 1200 Transfer Characteristics Ciss 600 0.10 300 0.05 VGS = 4.5 V Crss 0.00 0 2 4 6 8 10 0 0 4 8 12 16 20 Coss D www..com On-Resistance vs. Drain Current and Gate Voltage I - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 1.4 5 ID = 1 A VGS - Gate-to-Source Voltage (V) 4 R DS(on) - On-Resistance 1.3 VGS = 4.5 V, 2.5 V, 1.8 V, ID = 1 A VGS = 1.5 V, ID = 0.7 A 1.2 (Normalized) 3 VDS = 10 V 2 VDS = 16 V 1.1 VGS = 1.2 V, ID = 0.5 A 1.0 1 0.9 0 0 2 4 6 8 10 12 0.8 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 69984 S-82768-Rev. C, 17-Nov-08 SI8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 0.25 ID = 1 A R DS(on) - On-Resistance () 0.20 I S - Source Current (A) TJ = 150 C TJ = 25 C 1 0.15 TJ = 125 C 0.10 0.05 TJ = 25 C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 25 On-Resistance vs. Gate-to-Source Voltage 0.7 20 0.6 VGS(th) (V) ID = 250 A 0.5 Power (W) 15 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) www..com Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient Limited by RDS(on)* 10 I D - Drain Current (A) 100 s 1 ms 10 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 1 BVDSS Limited 10 100 100 ms, 1 s 10 s DC 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 5 SI8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 12 12 10 Power Dissipation (W) 75 100 125 150 9 I D - Drain Current (A) 8 Package Limited 6 6 4 3 2 0 0 25 50 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www..com www.vishay.com 6 Document Number: 69984 S-82768-Rev. C, 17-Nov-08 SI8445DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Notes: Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 Square Wave Pulse Duration (s) 0.01 0.1 www..com Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 69984 S-82768-Rev. C, 17-Nov-08 www.vishay.com 7 SI8445DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH) 4 x O 0.24 to 0.26 Note 4 Solder Mask ~ O 0.25 2 3 A2 e Bump Note 2 4xOb S S e D G s2 s1 e E Inches Max. 0.590 0.280 0.310 0.320 0.350 0.250 1.000 1.200 Min. 0.0201 0.0087 0.0114 0.0118 0.0130 0.0090 0.0378 0.0457 Nom. 0.0217 0.0098 0.0118 0.0122 0.0197 0.0134 0.0094 0.0388 0.0465 0.0138 0.0098 0.0394 0.0472 Max. 0.0232 0.0110 0.0122 0.0126 Document Number: 69984 S-82768-Rev. C, 17-Nov-08 1 4 e Recommended Land 8445 XXX Mark on Backside of die A1 Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter 0.30 to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of pin 1. * www..com Dim. A A1 A2 b e s1 s2 D E 0.330 0.230 0.960 1.160 Min. 0.510 0.220 0.290 0.300 Millimetersa Nom. 0.550 0.250 0.300 0.310 0.500 0.340 0.240 0.980 1.180 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69984. www.vishay.com 8 D A Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. www..com Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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